Boron nitride (BN) is an attractive material for the semiconductor industry, since it is possible to form insulator layers with a thickness of only one atom from it. However, there is no technology for the formation of such films suitable for use in serial production.
A breakthrough in this area seems to have been made by a group of researchers led by TSMC’s technology director and professor at the University of NCTU. Taiwanese scientists have found a way to synthesize layers of boron nitride one atom thick and have demonstrated its effectiveness in improving the performance of 2D transistors. This is an important achievement, since other existing technologies do not allow the formation of BN single crystals of such quality that they are suitable for use in industrial production. Project participants note that additional research is needed to bring the technology to commercial use.